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| SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP P G-TO262 560 0.19 21 PG-TO220 V A Type SPP21N50C3 SPI21N50C3 SPA21N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4565 Q67040-S4564 SP000216364 Marking 21N50C3 21N50C3 21N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Symbol SPP_I ID 21 13.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Page 1 Value SPA Unit A 211) 13.11) 63 690 1 21 20 30 34.5 15 W C V/ns A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=10A, VDD=50V 63 690 1 21 20 30 208 Avalanche energy, repetitive tAR limited by Tjmax2) ID=21A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature Reverse diode dv/dt Rev. 3.0 7) -55...+150 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 21 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=1000A, VGS=VDS VDS=500V, V GS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold - Values typ. 35 max. 0.6 3.6 62 80 62 260 Unit K/W C Values typ. 600 3 0.1 0.16 0.54 0.53 max. 3.9 500 2.1 - Unit V V(BR)DS VGS=0V, ID=21A A 1 100 100 0.19 nA Gate-source leakage current I GSS VGS=20V, V DS=0V VGS=10V, ID=13.1A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 3.0 Page 2 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance,6) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD=380V, ID=21A, VGS=0 to 10V VDD=380V, ID=21A Symbol gfs Ciss Coss Crss Conditions min. VDS2*ID*R DS(on)max, ID=13.1A VGS=0V, VDS=25V, f=1MHz Values typ. 18 2400 1200 30 87 181 10 5 67 4.5 max. - Unit S pF Effective output capacitance,5) Co(er) VGS=0V, VDS=400V td(on) tr td(off) tf VDD=380V, VGS=0/10V, ID=21A, RG =3.6 - ns - 10 50 95 5 - nC V(plateau) VDD=380V, ID=21A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220C, reflow 5C 6C o(er) o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 7I <=I , di/dt<=200A/us, V SD D DClink=400V, Vpeak 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP_I Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.00769 0.015 0.029 0.114 0.136 0.059 Tj Symbol IS I SM VSD t rr Q rr I rrm dirr /dt Conditions min. TC=25C Values typ. 1 450 9 60 1200 max. 21 63 1.2 - Unit A VGS =0V, IF=IS VR =380V, IF =IS , diF/dt=100A/s - V ns C A A/s 720 - Tj=25C Value SPA 0.00769 0.015 0.029 0.16 0.319 2.523 R th1 Unit K/W Symbol SPP_I Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPA 0.0003763 0.001411 0.001931 0.005297 0.008659 0.412 0.0003763 0.001411 0.001931 0.005297 0.012 0.091 Unit Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 3.0 Page 4 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 1 Power dissipation Ptot = f (TC) 240 SPP21N50C3 2 Power dissipation FullPAK Ptot = f (TC) 35 W W 200 180 25 Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ptot 20 15 10 5 160 C 160 0 0 20 40 60 80 100 120 TC C 160 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Rev. 3.0 Page 5 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 5 Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T 10 0 6 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t 10 1 K/W K/W 10 -1 10 0 ZthJC 10 -2 ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 10 -3 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -3 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS 70 8 Typ. output characteristic ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS 40 A Vgs = 20V Vgs = 7V Vgs = 6.5V Vgs = 6V A Vgs = 20V Vgs = 7V Vgs = 6V Vgs = 5.5V Vgs = 5V 50 30 ID ID 40 Vgs = 5.5V 25 20 30 Vgs = 5V 15 Vgs = 4.5V 20 Vgs = 4.5V 10 Vgs = 4V 10 Vgs = 4V 5 0 0 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 Rev. 3.0 Page 6 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 1.5 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V 1.1 SPP21N50C3 RDS(on) Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 20V 0.9 RDS(on) 0.8 0.7 0.6 0.5 0.4 0.9 0.6 0.3 98% 0.2 0.1 0.3 0 5 10 15 20 25 30 typ A ID 40 0 -60 -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 70 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 21 A pulsed 16 SPP21N50C3 A Tj = 25C V 50 12 VGS ID Tj = 150C 10 0,2 VDS max 40 8 30 6 20 0,8 VDS max 4 10 2 0 0 2 4 6 V 10 0 0 20 40 60 80 100 nC 140 VGS QGate Page 7 Rev. 3.0 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP21N50C3 14 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 20 A A IAR 10 1 IF Tj(Start)=25C 10 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 -3 10 10 -2 5 Tj(Start)=125C 10 -1 10 0 10 1 10 2 VSD s 10 tAR 4 15 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V mJ 750 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) 600 SPP21N50C3 V 550 V(BR)DSS C 600 570 560 550 540 530 520 510 500 490 480 470 460 EAS 500 450 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 160 450 -60 -20 20 60 100 C 180 Tj Rev. 3.0 Page 8 Tj 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 17 Avalanche power losses PAR = f (f ) parameter: EAR =1mJ 500 18 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 5 pF W 10 4 Ciss PAR 300 10 3 C 200 10 2 Coss 100 10 1 Crss 04 10 10 5 Hz f 10 6 10 0 0 100 200 300 V 500 VDS 19 Typ. Coss stored energy Eoss=f(VDS) 10 J E oss 6 4 2 0 0 50 100 150 200 250 300 350 400 V 500 VDS Rev. 3.0 Page 9 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 Definition of diodes switching characteristics Rev. 3.0 Page 10 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 3.0 Page 11 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO220-3-31/-3-111:Outline/Fully isolated package (2500VAC; 1 minute) Rev. 3.0 Page 12 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO262-3-1, PG-TO262-3-21 (I-PAK) Rev. 3.0 Page 13 2007-08-30 SPP21N50C3 SPI21N50C3, SPA21N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.0 Page 14 2007-08-30 |
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